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FFD04H60S
—
Hyperfast II Diode
www.fairchildsemi.com
3
?2008 Fairchild Semiconductor Corporation
FFD04H60S Rev. C1
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
vs. Forward Current
Figure 4. Typical Reverse Current vs.
Reverse Voltage
Figure 5.Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
vs. di/dt
Figure 7. Typical Reverse Recovery
Current vs. di/dt
Figure 8. Forward Current Derating Curve
0.001
0 100 200 300 400 500
0.01
0.1
1
10
TC
= 75
oC
TC
= 25
oC
TC
= 100
oC
Reverse Current , I
R
[
?
A
]
Reverse Voltage, VR
[V]
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
1
10
20
TC
= 75
oC
TC
= 100
oC
Forward Current, I
F
[A]
Forward Voltage, V
F
[V]
TC
= 25
oC
100.1 1 10 100
20
30
40
50
60
Capacitances , Cj [pF]
Typical Capacitance
at 0V = 55 pF
Reverse Voltage, VR[V]
100 200 300 400 500
10
20
30
40
TC
= 75
oC
IF
= 4A
TC
= 25
oC
TC
= 100
oC
Reverse Recovery Time, t
rr
[ns]
diF/dt [A/?s]
025 50 75 100 125 150
3
6
9
12
15
18
Average Forward Current, I
F(AV)
[A]
Case temperature, TC
[oC]
0
100 200 300 400 500di
F/dt [A/?s]
2
4
6
8
TC
= 75
oC
IF
= 4A
TC
= 25
oC
TC
= 100
oC
Reverse Recovery Current, I
rr
[A]
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